Hydrogen passivation for the performance enhancement of poly-Si crystallized by double-frequency YAG

• 作 者: 李娟 丁思维 姚颖 罗翀 孟志国 吴春亚 熊绍珍 张志林 郭海诚
• 机 构: Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology,Key Laboratory of Opto-e
• 出 处: Optoelectronics Letters
• 发表日期: 2010年04期
• 关键词: crystallized annealed preliminarily Hydrogen annealing LPCVD amorphous PECVD tra

The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing(LA polySi).The effects of passivation time,passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed.It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.

The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA polySi). The effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily certified. It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.