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报道了一种自对准T形电极结构的硅脉冲功率晶体管实验结果。在2GHz短脉冲工作条件下，该晶体管输出功率70W，增益8.5dB，集电极效率50％。
A self-aligned T-electrode structure of the silicon pulse power transistor experimental results reported. Under 2GHz short pulse operating conditions, the transistor output power of 70W, gain of 8.5dB, collector efficiency of 50%.