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In this paper,the electrical parameters of Au/n-Si(MS) and Au/Si3N4/n-Si(MIS) Schottky diodes are obtained from the forward bias current-voltage(I-V) and capacitance-voltage(C-V) measurements at room temperature.Experimental results show that the rectifying ratios of the MS and MIS diodes at±5 V are found to be 1.25 × 103 and 1.27 × 104,respectively.The main electrical parameters of the MS and MIS diodes,such as the zero-bias barrier height(ΦBo) and ideality factor(n),are calculated to be 0.51eV(I-V),0.53eV(C-V),and 4.43,and 0.65eV(I-V),0.70eV(C-V),and 3.44,respectively.In addition,the energy density distribution profile of the interface states(Nss) is obtained from the forward bias I-V,and the series resistance(Rs) values for the two diodes are calculated from Cheung’s method and Ohm’s law.
In this paper, the electrical parameters of Au / n-Si (MS) and Au / Si3N4 / n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (IV) and capacitance-voltage room temperature. Experimental results show that the rectifying ratios of the MS and MIS diodes at ± 5 V are found to be 1.25 × 103 and 1.27 × 104, respectively. The main electrical parameters of the MS and MIS diodes, such as the zero- The bias barrier height (ΦBo) and ideality factor (n) were calculated to be 0.51 eV (IV), 0.53 eV (CV), and 4.43, and 0.65 eV (IV), 0.70 eV (CV), and 3.44, respectively. In addition, the energy density distribution profile of the interface states (Nss) is obtained from the forward bias IV, and the series resistance (Rs) values for the two diodes are calculated from Cheung’s method and Ohm’s law.