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针对无源光网络(PON)设计了10 Gbit/s的突发模式前置放大器. 为了获取大动态范围和快速响应,电路采用DC耦合结构,并设计了一种反馈型峰值检测单元以实现自动增益控制与阈值提取功能. 利用调节型共源共栅(RGC)结构的输入级单元减小了电路的输入电阻,使得包括光检测器电容在内的大寄生电容与电路的主极点相隔离,从而提高了带宽. 该前置放大器采用低成本的0.13 μm CMOS工艺实现,芯片面积为425μm×475μm,总功耗为23.4mW. 测试结果表明,电路的工作速率范围在1.25 ～10.312 5Gbit/s,可提供64.0 dBΩ的高跨阻增益与54. 6 dBΩ的低跨阻增益,输入动态范围大于22.9 dB. 等效输入噪声电流为23.4 pA/Hz1/2. 该放大器可满足10G-EPON与XG-PON的相关指标.
A 10 Gbit / s burst mode preamplifier is designed for Passive Optical Network (PON). In order to obtain large dynamic range and fast response, the circuit adopts DC coupled structure and a feedback peak detection unit is designed to realize automatic Gain control and threshold extraction function.Using an input stage unit of a regulated cascode (RGC) structure reduces the input resistance of the circuit so that large parasitic capacitances including the photodetector capacitance are isolated from the main pole of the circuit, Thereby improving the bandwidth.The preamplifier is implemented in a low cost 0.13 μm CMOS process with a chip area of 425 μm × 475 μm and a total power consumption of 23.4 mW.The test results show that the operating speed of the circuit ranges from 1.25 to 10.312 5 Gbit / Provides high transimpedance gain of 64.0 dBΩ and low transimpedance gain of 54. 6 dBΩ, with input dynamic range greater than 22.9 dB and equivalent input noise current of 23.4 pA / Hz1 / 2. The amplifier meets the 10G-EPON and XG- PON related indicators.