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日本松下公司目前宣布,公司已开发出一种CMOS晶体管,该晶体管将显著降低系统芯片的能耗。松下电子公司表示,该晶体管采用纳米技术,通过在硅半导体上涂上一层薄薄的硅锗层研制而成。由于硅锗的导电性能极佳,因此该晶体管可以在0.5伏的电压下工作,即传统晶体管工作电压的1/3。使用该晶体管,可以使新芯片的能耗降低90%以上,从而在很大程度上降低芯片的发热量,这对于开发高性能芯片是至关重要的。公司透露,该款芯片有望在2005或2006年被用于下一代移动设备中。
Panasonic Japan currently announces that it has developed a CMOS transistor that will significantly reduce the power consumption of the system-on-chip. Matsushita Electric said the transistor uses nanotechnology, developed by coating a thin silicon germanium layer on a silicon semiconductor. Since silicon germanium has excellent conductivity, the transistor can operate at a voltage of 0.5 volts, which is 1/3 of the operating voltage of a conventional transistor. Using this transistor can reduce the energy consumption of the new chip more than 90%, thus greatly reducing the chip’s heat, which is crucial for the development of high-performance chips. The company revealed that the chip is expected to be used in 2005 or 2006 in the next generation of mobile devices.