2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

• 作 者: Manel Charfeddine Hafedh Belma
• 机 构: Laboratoired’é,lectroniqueetdemicroé,lectronique,Laboratoiredemicro-optoé,lectroniqueetn
• 出 处: 现代物理(英文)
• 发表日期: 2012年8期
• 关键词: ALGAN/GAN High ELECTRON Mobility TRANSISTORS Two-Dimensional ELECTRON Gas Sheet

A threshold-voltage-based 2-D theoretical model for the Current–Voltage characteristics of the AlGaN/GaN high electron mobility transistors (HEMT’s) is developed. The present work proposes an improved charge-control model by employing the Robin boundary c