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A cryogenic low noise amplifier (LNA) using Agilent high electron mobility transistor (HEMT) for 380 MHz to 480 MHz is designed and fabricated, and the excellent cryogenic performance in superconducting receiver front-end for communication system is achieved. A special input impedance matching topology is implemented to provide low noise figure (NF) and good input matching in this cryogenic LNA design. The measurement results show that the NF is within 0.25 dB from the minimum NF of a single transistor, the power gain is above 20 dB, the flatness is within 1 dB, and the maximum input return loss is lower than -20 dB in bandwidth.
A cryogenic low noise amplifier (LNA) using Agilent high electron mobility transistor (HEMT) for 380 MHz to 480 MHz is designed and fabricated, and the excellent cryogenic performance in superconducting receiver front-end for communication system is achieved. A special input impedance matching topology is implemented to provide low noise figure (NF) and good input matching in this cryogenic LNA design. The measurement results show that the NF is within 0.25 dB from the minimum NF of a single transistor, the power gain is above 20 dB, the flatness is within 1 dB, and the maximum input return loss is lower than -20 dB in bandwidth.