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采用基于粉末成形及半固态触变成形工艺提出的粉末触变成形工艺,在不同的重熔温度下制备了电子封装用SiC_p/Al复合材料。结果表明,通过触变成形制备的SiC_p/Al复合材料中合金基体相互连接构成网状,SiC_p均匀镶嵌分布于Al基体中;重熔温度的升高可使材料致密度、热导率、硬度和抗弯强度提高,热膨胀系数减小,断口主要表现为脆性断裂。复合材料室温下的热导率在117.54~135.51 W·m~(-1)·K~(-1)之间,室温至300℃平均热膨胀系数小于7×10~(-6)℃~(-1),硬度(HV)和抗弯强度分别为99.47~113.52、325.90~346.91 MPa。
The powder thixoforming process based on powder forming and semi-solid thixoforming was used to prepare SiCp / Al composites for electronic packaging at different remelting temperatures. The results show that the matrix of SiC_p / Al composites prepared by thixoforming are interconnected to form a network, and the SiC_p is evenly embedded in the Al matrix. The increase of the remelting temperature can make the material density, thermal conductivity, hardness And flexural strength increased, the thermal expansion coefficient decreases, the fracture mainly manifested as brittle fracture. The thermal conductivity of the composites at room temperature ranged from 117.54 to 135.51 W · m -1 K -1 and the average coefficient of thermal expansion from room temperature to 300 ℃ was less than 7 × 10 -6 ℃. 1), hardness (HV) and flexural strength were 99.47 ~ 113.52,325.90 ~ 346.91 MPa respectively.