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研究了生长在硅片、合金钢片上的氮化碳薄膜的X射线衍射谱(XPD)。实验结果表明在硅片上先生长Si_3N_4过渡层和对样品进行热处理,有利于β-C_3N_4晶体的生成。不同晶面的硅衬底,生长C_3N_4薄膜的晶面不同。合金钢片上C_3N_4薄膜,出现七个β-C_3N_4衍射峰和六个α-C_3N_4衍射峰,这些结果与β-C_3N_4和α-C_3N_4的晶面数据计算值相符合。
The X-ray diffraction (XPD) spectra of carbon nitride films grown on silicon wafers and alloyed steel sheets were investigated. The experimental results show that Si3N4 transition layer is grown on the silicon wafer and the sample is heat-treated, which is favorable for the formation of β-C_3N_4 crystal. Different crystalline silicon substrate, growing C_3N_4 film of different crystal plane. The results show that there are seven β-C_3N_4 diffraction peaks and six α-C_3N_4 diffraction peaks on the C_3N_4 thin films on the steel sheets. These results are consistent with the calculated data of the crystal planes of β-C_3N_4 and α-C_3N_4.