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一、引言 半导体器件的性能与表面状态密切相关。在平面器件的硅-二氧化硅系统中存在多种表面态,其中之一便是界面能态(至于可动电荷等附加能态的影响及其减小,消除办法这里从略),它是由于界面处硅晶格结构不完整,使界面态有许多电子能级,这些表面能级能量间隔很小,可近似看成是以连续的能带形式分布在半导体的禁带中的能级,它们能从硅导带和价带俘获电子和空穴,因此是一种产生—复合中心。也可以认为,表面能态(包括氧化层陷阱能态)很可能是因为Si-SiO_2之间失配以及氧化层缺陷所致,当硅没有完全氧化以及氧化层内有金属杂质使硅留有空的价键,造成施主和受主能态,换言之,硅表面品格周期性排列
I. INTRODUCTION The performance of semiconductor devices is closely related to the surface state. There are many kinds of surface states in the planar silicon-silicon dioxide system. One of them is the interfacial energy state (as for the influence of the additional energy such as the movable charge and its reduction), it is Due to the incomplete structure of the silicon lattice at the interface, there are many electron energy levels in the interface state. The energy levels of these surface energy levels are small and can be approximately regarded as the energy levels distributed in the forbidden band of the semiconductor in the form of continuous energy bands, They can trap electrons and holes from the conduction band and the valence band of the silicon and are therefore a species-recombination center. It is also believed that the surface energy states (including oxide trap states) are most likely due to mismatches between Si-SiO 2 and defects in the oxide layer, leaving the silicon blank when silicon is not fully oxidized and metal impurities are present in the oxide layer Of the valence bond, resulting in the donor and acceptor states, in other words, the periodic arrangement of silicon surface character