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Vishay Intertech宣布,推出首款采用PowerPAIR○R6mm×3.7mm封装和TrenchFET Gen III技术的非对称双通道TrenchFET○R功率MOSFET——SiZ710DT,新器件比前一代器件的导通电阻减小43%,同时具有更高的最大电流并提高效率。SiZ710DT在一个小尺寸封装中整合了低边和高边MOSFET,具有
Vishay Intertech Announces First Asymmetric Dual Channel TrenchFET ○ R Power MOSFET - SiZ710DT in PowerPAIR ○ R6mm × 3.7mm Package and TrenchFET Gen III Technology, New Device Delivers 43% Reduced On-State Resistance over Previous Generation Devices Has a higher maximum current and improves efficiency. The SiZ710DT incorporates low-side and high-side MOSFETs in a small footprint package