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在液氮温度下对Hg_(0.64)Cd_(.36)Te外延层注~(11)B时(剂量为10~(15)cm~(-2),能量为250keV)所造成的晶体损伤成功地进行了退火。并用兆电子伏级的氦离子沟道和卢瑟福背散射(Rutherford backscattering)作了观察。退火是将样片用硅板盖上,在空气中用热脉冲方式来进行的(温度为260℃,时间是8秒)。二次离子质谱分析(SIMS)数据表明在退火时硼不会扩散,由电子束感应电流(EBIC)测出p—n结的结深为5.5μm,在这个外延层上制备的二极管的I—V曲线十分陡直,其反向击穿电压是12V,而在77K时的R_oA乘积≥10~7Ω·cm~2。
Crystal damage caused by the epitaxial layer of Hg_ (0.64) Cd_ (. 36) Te with ~ (11) B at a dose of 10 ~ (15) cm ~ 2 and an energy of 250 keV at liquid nitrogen temperature was successfully Annealed. And observed with a megasonic helium ion channel and Rutherford backscattering. Annealing is to cover the sample with a silicon plate and heat pulse in the air at a temperature of 260 ° C for a period of 8 seconds. Secondary ion mass spectrometry (SIMS) data show that boron does not diffuse during annealing, the junction depth of the p-n junction measured by electron beam induced current (EBIC) is 5.5 μm, and the I- V curve is very steep, the reverse breakdown voltage is 12V, and 77K R_oA product ≥ 10 ~ 7Ω · cm ~ 2.