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用外延生长技术已制备了单晶硫化铅光伏元件和光电导薄膜。光伏元件的光谱响应用在刚短于PbS禁带宽度的波长处的尖峰表示。光导薄膜用低于3×10~(16)厘米~(-3)的载流子浓度生长,当冷却到77°K时显示出两个大的性质不同的信号。一个响应的特点是时间常数>50毫秒,它属于氧感应表面俘获电子的光激发性质。第二个响应的时间常数是32微秒,它属于硫化铅的本征光电导性。
Single-crystal lead sulfide photovoltaic elements and photoconductive thin films have been prepared by epitaxial growth techniques. The spectral response of the photovoltaic element is expressed as a spike at a wavelength just short of the bandgap of PbS. Photoconductive films grow with carrier concentrations below 3x10 ~ (16) cm ~ (-3) and show two large, distinct properties when cooled to 77 ° K. A response is characterized by a time constant of> 50 milliseconds, which belongs to the photoexcited nature of the trapped electrons on the oxygen sensing surface. The second response time constant is 32 microseconds, which belongs to the intrinsic photoconductivity of lead sulfide.