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具有计算机控制的电子束曝光是制造亚微米掩模版的最重要的手段。本文对SDS—1型电子束曝光机制作掩模版的图案精度进行了分析,并提出提高图案精度的相应措施。
Computer-controlled electron beam exposure is the most important means of making submicron reticle. In this paper, the pattern accuracy of the mask for the SDS-1 electron beam exposure machine is analyzed, and corresponding measures to improve the pattern accuracy are proposed.