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为了研制符合“国家863”项目要求的,满足高线性大功率直接调制应变多量子阱半导体激光器,对AlGaInAs/InP应变多量子阱激光器的有源区的量子阱数及芯片生长工艺进行了研究。根据求解速率方程组、计算载流子浓度分布,分析瞬态过程和稳态过程,得出理论最优阱数,再在最优阱数下对比不同温度下的激光器的各项性能指标,得出最佳温度值。基于ALDS软件模拟建立了AlGaInAs/InP仿真模型,模拟结构输入、材料求解、阈值分析、性能计算等。讨论了不同量子阱个数、不同温度对器件稳态、大小信号、噪声等的影响。结果表明,当阱组分为Al_(0.24)Ga_(0.23)In_(0.53)As,阱宽为3.3nm,垒宽为8.1nm,阱数为10,温度为25℃,本激光器各项性能指标均为最优,阈值电流达13.40mA,输出功率为5.6mW。
In order to develop a quantum well number and chip growth process in AlGaInAs / InP multi-quantum well laser with high linearity and direct modulation response to the requirements of the “National 863” project, the study. Calculate the carrier concentration distribution according to the solving rate equation, analyze the transient process and the steady-state process, get the optimal number of wells, and then compare the performance indexes of lasers at different temperatures under the optimal number of wells. Out of the best temperature value. AlGaInAs / InP simulation model was established based on ALDS software simulation, input of simulation structure, material solution, threshold analysis, performance calculation and so on. The effects of the number of different quantum wells, different temperatures on the device steady state, the size of the signal, the noise and so on are discussed. The results show that when the well composition is Al 0.24 Ga 0.23 In 0.53 As, the well width is 3.3 nm, the base width is 8.1 nm, the number of wells is 10 and the temperature is 25 ℃, the performance of the laser Are the best, the threshold current of 13.40mA, the output power of 5.6mW.