Time delay in InGaN multiple quantum well laser diodes at room temperature

• 作 者: 季莲 江德生 张书明 刘宗顺 曾畅 赵德刚 朱建军 王辉 段俐宏 杨辉
• 机 构: State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sc
• 出 处: Chinese Physics B
• 发表日期: 2010年12期
• 关键词: pumping sapphire lasing irradiation capturing absorber remarkably filled slower

This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulse is observed in InGaN laser diodes.The delay time decreases as the pumping current increases,and the speed of the delay time reduction becomes slower as the current amplitude increases further.Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrate than those on sapphire.It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action.The traps can be bleached by capturing injected carriers.The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centres which can be filled by the photo-assisted processes.

This paper reports that a long delay between the beginning of pumping current pulse and the onset of optical pulses is observed in the pumping current increases, and the speed of the delay time reduction becomes slower as the current amplitude increased further.Such delay phenomena are remarkably less serious in laser diodes grown on GaN substrates than those on sapphire. It attributes the delay to the traps which cause a large optical loss by saturable absorption and retard the laser action. The traps can be bleached by capturing injected carriers. The effect of GaAs laser irradiation on InGaN laser action demonstrates that the traps responsible for the delay are deep centers which can be filled by the photo-assisted processes.