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10月17日,英特尔发布了1.8伏StrataFlash 无线闪存,它是业界第一款将快速数据存储与 StrataFlash 技术相结合的产品,将一个存储单元的存储容量提高了一倍。同时,这款产品也是第一款采用0.13微米工艺,并在1.8伏电压下工作的的多级单元闪存,其功耗比目前业界功耗最低的同类产品还要低近40%。新的闪存技术目前可提供64Mb、128Mb 和256Mb 三种不同的密度选择。此外,英特尔还将采用一种被称为“堆叠式芯片尺寸封装(stackedchip scale packaging)”的内存堆叠技术,该技术可以将最多四枚单独的1.8伏 StrataFlash 无线闪存堆叠在一起,从而获得最高达1Gb 的代码和数据储存密度——这是第一次在1.8伏工作电压
On October 17, Intel unveiled the 1.8-volt StrataFlash wireless flash memory, the industry’s first product to combine fast data storage with StrataFlash technology, doubling the storage capacity of a single storage unit. At the same time, this product is the first multi-level cell flash in a 0.13-micron process to operate at 1.8 volts, consuming nearly 40 percent less power than the industry’s lowest power class. The new flash memory technology now offers 64Mb, 128Mb and 256Mb three different density options. In addition, Intel will also adopt a memory stacking technology called “stacked chip scale packaging” that stacks up to four separate 1.8-volt StrataFlash wireless flash memories for up to 1Gb of code and data storage density - this is the first time a 1.8V operating voltage