FT-CCD的纳秒脉冲激光毁伤效应

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用1 064 nm波长8 ns脉宽激光,以1-on-1模式辐照在评估板驱动工作下的FT50M型FTCCD图像传感器进行实验。结果显示,随着脉冲能量密度的逐渐提高,在FT-CCD输出图像中依次出现辐照点单侧黑线、白点、两侧白线等典型毁伤现象。这区别于IT-CCD在脉冲激光辐照下依次出现白点、白线的毁伤过程。通过对比FT-CCD与IT-CCD的结构异同,结合已知的IT-CCD的毁伤机制,分析认为单侧黑线毁伤现象的首先出现表明了FT-CCD多晶硅电极先于硅衬底受损的激光毁伤模式。文中丰富了对CCD图像传感器激光毁伤效应的认识,为深入探索CCD激光毁伤机制提供了新的线索。 Experiments were carried out using an FT50M FTCCD image sensor driven by an evaluation board driven by a 1-on-1 mode pulse laser at a wavelength of 1064 nm and a pulse width of 8 ns. The results show that with the gradual increase of pulse energy density, typical damage phenomena such as unilateral black line, white point and white lines on both sides appear in the output image of FT-CCD. This is different from the IT-CCD in the pulse laser irradiation followed by white spots, the white line of the damage process. By comparing the similarities and differences between FT-CCD and IT-CCD and combining with the known damage mechanism of IT-CCD, the first appearance of unilateral black-line damage is analyzed, which shows that the damage of FT-CCD polycrystalline silicon electrode before silicon substrate Laser damage mode. The article enriches the understanding of the laser damage effect of the CCD image sensor and provides new clues for exploring the CCD laser damage mechanism in depth.
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