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本文利用线性电压扫描法,对MOS电容的c-t曲线进行逐点处理,得到了τ_g-t、s_g-t下的曲线.由τ_g-t的曲线可以方便地找出τ_g-x的分布.这种方法不仅能将s_g与τ_g分离出来,而且能一次测得τ_g随深度x的变化而变化的关系,以及s_g随表面势变化而变化的讯息.
In this paper, the curve of τ_g-t, s_g-t is obtained by applying the linear voltage sweep method to the ct curve of MOS capacitor. The distribution of τ_g-x can be conveniently found by the curve of τ_g-t. The method not only separates s_g from τ_g, but also measures the relationship between τ_g and depth x and the change of s_g with the change of surface potential.