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采用反应磁控溅射法制备二氧化钒(VO2)薄膜,并对其进行快速热处理(RTP)。主要研究500℃快速热处理10、15、20s工艺条件下VO2薄膜结晶状况和光电性能的变化。在20℃～80℃温区内,应用四探针薄膜电阻测试方法和太赫兹时域频谱技术(THz-TDS)测量了各样品的电学相变特性和光学相变特性。结果表明,经过快速热处理的样品电学相变幅度均达到了2个数量级以上;THz波的透射率在半导体-金属相变前后的最大变化达到了57.9%。同时发现,热处理500℃,10s时VO2的电学和光学相变幅度相对要大,当热处理时间达到15s左右时薄膜的相变幅度变化不再明显。快速热处理时间的长短对热致相变温度点的影响较小,但热致电学相变和光学相变的相变温度点不同:光学相变的温度为60℃左右,电学相变温度则在56℃附近。
VO2 films were prepared by reactive magnetron sputtering and subjected to rapid thermal annealing (RTP). The main research is the change of VO2 thin film crystallization condition and photoelectric property under the condition of 500 ℃ rapid thermal treatment for 10, 15, 20s. In the temperature range from 20 ℃ to 80 ℃, the four-probe thin-film resistance test and THz-TDS technique were used to measure the electrical phase transition and the optical phase transition of each sample. The results show that the electrical transformations of the samples after rapid thermal treatment all reach more than two orders of magnitude, and the maximum change of THz wave transmittance before and after the semiconductor-metal transition reaches 57.9%. At the same time, it is found that the electrical and optical phase transitions of VO2 at 500 ℃ and 10s are relatively large. When the heat treatment time is about 15s, the phase change of the film is no longer obvious. The effect of the rapid heat treatment time on the temperature induced phase transition point is small, but the phase transition temperatures of the thermoelectric phase transition and the optical phase transition are different: the optical phase transition temperature is about 60 ℃, the electrical phase transition temperature is 56 ℃ nearby.