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本文以开发长波长半导体光电子材料为目的，对ＧａＡｓ１－ｘＳｂｘ／ＧａＡｓ这一大失配异质结材料开展了较为深人的研究，利用国产ＭＢＥＩＩＩ型设备外延生长了全组分的ＧａＡｓ１－ｘＳｂｘ材料，化学热力学数据分析表明，Ｓｂ结合到ＧａＡｓｓｂ中的速率比Ａｓ高得多，实验表明，合金组分可由Ｓｂ／Ｇａ束流比控制，也发现Ｓｂ束流的支配作用随温度升高而降低．利用ＴＥＭ和ＲＢＳ技术研究了异质结界面及外延层的晶体质量，实验表明采用组分阶变的过渡层有效地抑制了界面位错向体层的延伸，可以获得较高晶体质量的外延层．
In order to develop long-wavelength semiconductor optoelectronic materials, this paper carried out a more in-depth study of GaAs1-xSbx / GaAs heterostructure material. The GaAs1-xSbx materials were epitaxially grown by MBEIII The analysis of chemical thermodynamic data shows that the rate of Sb incorporation into GaAssb is much higher than that of As. Experiments show that the composition of Sb can be controlled by the Sb / Ga beam ratio, and the dominating effect of Sb beam decreases with increasing temperature. The TEM and RBS techniques were used to study the crystal quality of the heterojunction and epitaxial layers. The experimental results show that the epitaxial layer with higher crystal quality can be obtained by using the step-changing transition layer to suppress the interface dislocation to the extension of the bulk layer effectively .