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提出一种新型的多晶硅薄膜晶体管电流-电压物理模型.考虑了陷阱态密度的V形指数分布,运用Lambert W函数推出了表面势的显式求解方法,大大提高了运算效率,在电路仿真中发挥了重要作用.基于指数的陷阱态密度和计算的表面势,描述了亚阈值区和强反型区的漏电流特性.推导了完整、统一的漏电流表达式,包括翘曲效应.在很广的沟道长度范围和工作区内,模型和实验数据一致.
A novel current-voltage physical model of polycrystalline silicon thin film transistor is proposed. Considering the V-shaped exponential distribution of trap density, an explicit solution of surface potential is proposed by Lambert W function, which greatly improves the computational efficiency and plays a role in circuit simulation The important role of the leakage current characteristics of the sub-threshold region and the strong inversion region is described based on the index trap density and the calculated surface potential. A complete and unified leakage current expression is derived including the warpage effect. The channel length range and workspace are consistent with the model and experimental data.