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Although graphene has attracted much attention and has been studied for decades in different pattes,[1-3] its potential applications in electronics were not recognized until 2001.[4,5] There are several approaches to fabricate graphene at present,[6-8] but graphene-based electronics require a diversified form of graphene with excellent electronic properties and it was generally accepted in the initial stage[4] that EG on silicon carbide was the most promising form for this application.However,the EG layers with low qualities fabricated by conventional processes were discontinuous and inhomogeneous,which primarily derived from the high sublimation of the Si element.