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射频溅射 CoMnNiO-AuGeNi 非晶薄膜223K～343K 温区具有线性电阻温度系数.电阻率ρ=ρ_0[1-m(T-T_0)],温度系数可达6000ppm。这种材料的 B 值与温度的关系为,B=Tln[1-m(T-T_0)];激活能△E=KTln[1-m(T-T_0)]。本文报导这种材料的实验结果,并对电阻温度特性的线性化机理进行解释。
RF sputtering CoMnNiO-AuGeNi amorphous film with a temperature coefficient of 223K ~ 343K linear temperature coefficient of resistance. Resistivity ρ = ρ_0 [1-m (T-T_0)], the temperature coefficient of up to 6000ppm. The B value of this material is related to temperature by B = Tln [1-m (T-T_0)]; activation energy ΔE = KTln [1-m (T-T_0)]. This paper reports the experimental results of this material and explains the linearization mechanism of the resistance temperature characteristics.