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In the present work, the electronic level associated with the arsenic-antisite-arsenic-interstitial model for the structure of EL2 has been calculated by using the EHT method. Fourty-two atoms are contained in the cluster and the location of arsenic-interstitial in the EL2 stable state is at two bond lengths distant from arsenic-antisite along the (111) direction, surrounded by four nearest arsenic neighbors. The defect complex has C3V symmetry and the group theory is applied to reduce the secular equation. The optical cross section associated with EL2 is also calculated. The theoretical results revealed that the EL2 defect is the complex arsenic-antisite-arsenic-interstitial.
In the present work, the electronic level associated with the arsenic-antisite-arsenic-interstitial model for the structure of EL2 has been calculated by using the EHT method. Fourty-two atoms are contained in the cluster and the location of arsenic-interstitial in the EL2 stable state is at two bond lengths distant from arsenic-antisite along the (111) direction, surrounded by four nearest arsenic neighbors. The defect complex has C3V symmetry and the group theory is applied to reduce the secular equation. The optical cross section associated with EL2 is also calculated. The theoretical results revealed that the EL2 defect is the complex arsenic-antisite-arsenic-interstitial.