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Nd3+:Cs2NaGdCl6 and Nd3+, Yb3+:Cs2NaGdCl6 polycrystalline powder samples were prepared by Morss method E. Under 785 nm semiconductor laser pumping, the upconversion luminescence of Nd3+ ions in Cs2NaGdCl6 was investigated at room temperature, and three upconversion emissions near 538 nm (Green), 603 nm (Orange), and 675 nm (Red) were observed and assigned to 4G7/2→4I9/2, (4G7/2→4I11/2; 4G5/2→4I9/2), and (4G7/2→4I13/2; 4G5/2→4I11/2), respectively. The dependences of these upconverted emissions on laser power and Nd3+ ion concentration were investigated, to explore the upconversion mechanism. The effect of doping Yb3+ ions on the upconversion luminescence of Nd3+ in Cs2NaGdCl6 was also studied under 785 nm laser excitation. The energy transfer processes were discussed as the possible mecha-nism for the above upconversion emissions.
Nd3 +: Cs2NaGdCl6 and Nd3 +, Yb3 +: Cs2NaGdCl6 polycrystalline powder samples were prepared by Morss method E. Under 785 nm semiconductor laser pumping, the upconversion luminescence of Nd3 + ions in Cs2NaGdCl6 was investigated at room temperature, and three upconversion emissions near 538 nm (Green) , 603 nm (Orange), and 675 nm (Red) were observed and assigned to 4G7 / 2 → 4I9 / 2, (4G7 / 2 → 4I11 / 2; 4G5 / 2 → 4I9 / 2) 4I13 / 2; 4G5 / 2 → 4I11 / 2), respectively. The dependences of these upconverted emissions on laser power and Nd3 + ion concentration were investigated to explore the upconversion mechanism. The effect of doping Yb3 + ions on the upconversion luminescence of Nd3 + in Cs2NaGdCl6 was also studied under 785 nm laser excitation. The energy transfer processes were discussed as the possible mecha-nism for the above upconversion emissions.