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由于砷化镓肖特基栅场效应晶体管的输入输出阻抗比双极晶体管高,设计宽带放大器有一定的困难。本报告用如下的结构实现了宽带化。首先,利用有限长的50欧姆线路将设计在中心频率的场效应晶体管输入输出阻抗变成纯电阻,其次,用二级阶梯变换器变成电阻值,最后,利用二级阶梯变换器变为50欧姆。在场效应晶体管输入输出阻抗的纯电阻变换回路中,使用有限长的50欧姆线路时,从图1可知,变换回路的传输量G(ω~2)表示如下
Due to the gallium arsenide Schottky barrier field effect transistor input-output impedance higher than bipolar transistors, the design of broadband amplifiers have some difficulties. This report achieves broadband with the following structure. First, using a finite 50 ohm line, the input-output impedance of the field-effect transistor designed at the center frequency is changed to a pure resistance. Second, the resistance of the ladder-type converter is changed to a resistance value. Finally, ohm. In a purely resistive conversion circuit having a field effect transistor input-output impedance, when a limited 50-ohm line is used, it can be seen from FIG. 1 that the transmission amount G (ω ~ 2) of the conversion circuit is as follows