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在3DD15、D7312、DD03等一类硅低频大功率管技术参数中,有一项重要的直流参数,即发射结反向击穿电压BV_(EBO)。EB结反向特性的硬、软和高低,直接影响交、直流讯号的正常放大,按技术指标的规定,一般均要求BV_(EBO)≥5V(测试条件I_B=1mA)且呈硬击穿。根据3DD15、DD03、D7312等一类低频大功率管的工艺结构设计,为了保证器件在大电流工作时也有同样足够的电流放大系数以及有较高的BV_(EBO)、BV_(CEO),我们选取基区浓度N_D=(1～5)×10~(18)cm~(-3),N_(e)=1×10~(21)cm(-3),X_(ic)≈30μm,X_(ie)=15～20μm,实际制得的管子EB反向击穿电压BV(EBO)均能达到12V以上,且
In 3DD15, D7312, DD03 and other silicon low frequency power tube technology parameters, there is an important DC parameter, the firing junction reverse breakdown voltage BV_ (EBO). The reverse, reverse and reverse characteristics of the EB junction directly affect the normal amplification of the AC and DC signals. Generally, BV_ (EBO) ≥5V (test condition I_B = 1mA) and hard breakdown are required according to the technical specifications. According to 3DD15, DD03, D7312 and other types of low-frequency high-power tube structure design, in order to ensure that the device in the high current work also have enough current amplification factor and a higher BV_ (EBO) BV_ (CEO), we choose The concentration of basement N_D = (1 ~ 5) × 10 ~ (18) cm -3, N e = 1 × 10 ~ (21) cm -3, X ic ≈ 30μm, X_ ie) = 15 ~ 20μm, the actual tube EB reverse breakdown voltage BV (EBO) can reach more than 12V, and