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为了研究N’,N’-二乙基硫脲添加剂在微沉积工艺中对铜金属孔洞填充能力的影响,采用线性伏安法(LSV)、循环伏安法(CV)、SEM测量法分析比较了无添加剂、含硫脲和含N’,N’-二乙基硫脲添加剂时微沉积铜工艺中的电化学行为,并借助塔菲尔方程,分析比较此三种情况下电镀反应过程中的电极动力学参数.结果显示:当铜微沉积工艺中加入N’,N’-二乙基硫脲添加剂时,产生活性极化,该活性极化效应降低铜离子的放电速度,抑制孔洞边缘部分沉积较快区域的过快生长;同时活性极化提高,将导致成核点的增加,沉积膜的晶粒较小,镀膜也较平滑细致,实验测得铜离子的平滑能力比没有添加剂时提高约50%.最后通过微沉积工艺成功地将金属铜填充入宽为10μm,深宽比为4∶1的微型凹槽中,且镀层内没有空洞、空隙以及细缝等缺陷.
In order to investigate the effect of N ’, N’-diethylthiourea additives on the hole filling ability of copper metal in micro-deposition process, linear voltammetry (CV), cyclic voltammetry (CV) and SEM were used to analyze and compare Electrochemical behavior of micro-depositing copper without additive, thiourea and N, N’-diethyl thiourea additive was studied. The electrocatalytic behavior in the copper plating process was analyzed by Tafel equation. The results show that when N ’, N’-diethylthiourea additive is added to the copper micro-deposition process, the active polarization is generated, which reduces the discharge rate of copper ions and restrain the edge of the hole Part of the rapid deposition of the rapid growth of the region; the same time the increase in active polarization will lead to an increase in the nucleation point, the deposited film smaller grains, the coating is also more smooth and delicate experiments measured the smoothness of copper ions than without additives By about 50% .At last, the metallic copper was successfully filled into the micro-grooves with the width of 10μm and the aspect ratio of 4:1 by the micro-deposition process without defects such as voids, voids and slits in the coating.