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用电子回旋共振等离子体增强的化学汽相沉积法 ,在单晶硅衬底上外延生长出了近于10 0 μm2 的单晶金刚石薄膜。使用的原料气体是高纯的氢气和甲烷 ,生长前没有对衬底做划痕和研磨等预处理。生长中是把衬底放在ECR共振区 ,并施加了射频负偏压。研究证实 ,在单晶金刚石薄膜的外延中 ,硅衬底表面形成高质量结晶的 β SiC过渡层是外延生长金刚石单晶的关键条件 ;而射频负偏压对于 β SiC过渡层的形成是致关重要的条件。
The single crystal diamond films were epitaxially grown on monocrystalline silicon substrates by near 100 μm 2 by chemical vapor deposition enhanced by electron cyclotron resonance plasma. The raw material gas used is high-purity hydrogen and methane, and there is no pretreatment of the substrate before scratching and grinding. In growth, the substrate is placed in the ECR resonance region and RF negative bias is applied. The results show that during the epitaxial growth of single crystal diamond films, the formation of high quality crystalline β SiC transitional layer on the surface of silicon substrate is the key condition for epitaxial growth of single crystal diamond; while the RF negative bias is responsible for the formation of β SiC transition layer Important condition.