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在 10～ 77K测量温度范围内 ,从室温伽马辐照着色的掺羟NaF晶体中观察到R2 和N-带零声子线 (ZPLs)。用普通分光光度计的光在 10K下能将N-ZPLs完全漂白。用其更窄带的光在 10K能在此线的吸收光谱上烧出 1个明显的孔。在适当温度下 ,用紫外光照射能将此线的光漂白几乎全部恢复。在不同温度下 ,研究了未掺杂NaF晶体 82 1nmZPL光谱特性随温度的变化关系 ,并估算出对应的Huang Rhys因子约为 2 .4 9。
R2 and N-band zero-phonons (ZPLs) were observed at room temperature gamma-irradiated tinted NaF crystals in the 10-77K measurement temperature range. N-ZPLs can be completely bleached at 10K with normal spectrophotometer light. With its more narrow-band light at 10K, one clear hole can be burned in the absorption spectrum of this line. At an appropriate temperature, irradiation with UV light can almost completely recover the photobleaching of this line. At different temperatures, the spectral characteristics of 1 nm ZPL in undoped NaF crystal were investigated with temperature and the corresponding Huang Rhys factor was estimated to be about 2.49.