Preparation and Interface Studies on HgCdTe/CdTe/GaAs Grown by MOCVD

• 作 者: 丁永庆 彭瑞伍 陈记安 杨臣华 陈美霓
• 机 构: ShanghaiInstituteofMetallurgyAcademiaSinica,Shanghai200050,China,ShanghaiInstituteofMetallurgy,Acade
• 出 处: Rare Metals
• 发表日期: 1992年2期
• 关键词: MOCVD HgCdTe/CdTe/GaAs structures CdTe/GaAs BUFFER LAYERS INTERFACE Electrical p

When we use MOCVD technique,an excellent CdTe epi-layer was grown on GaAs substrates and theCdTe/GaAs hybrid substrates suitable for growing Hg_1-xCd_xTe（CMT）were obtained.The x value in CMT isbetween 0.2 and 0.