Unidirectional p-GaN gate HEMT with composite source-drain field plates

• 作 者: 显示全部作者
• 机 构: Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Mic
• 出 处: null
• 发表日期: 2020年01期
• 基金项目: supported in part by the Key Research and Development Program of Shaanxi （Grant No. 2020ZDLGY03-05）； Key-Area Resarch and Development Program of Guangdong Province （Grant No. 2020B0

<正>Dear editor,GaN-on-Si high electron mobility transistors（HEMTs） have attracted attention for power device applications due to their low cost and large-area availability [1]. Recently,bidirectional switches are highly desirable in many industrial bidirectional power conversion applications, such as rolling mills, elevators, and wind power generation.