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本文演示了运用精确电压衬度像技术实现原位电子束纳米刻蚀技术的精确定位,并运用该技术制作成具有悬挂结构的纳米开关。通过运用精确电压衬度像定位技术,能够很好地控制偏转电极的定位,误差可减少到大约10nm。通过该技术,不用通过任何刻蚀过程只运用一次电子束纳米刻蚀,便可实现将分散的纳米线夹在两个电阻层中间形成悬挂结构。在原位电子束刻蚀的整个过程中,无需移动样品台从而消除了样品台的移动误差。因此,整个过程中不需要高精确的激光台和定位标记,从而简化了传统的电子束纳米刻蚀工艺。通过该方法制作的纳米开关随着施加电压的改变很好地实现了闭合和断开的状态。这种简化的过程提供了一种简单、低成本、快速的通过改装过的场发射扫描电子显微镜(FESEM)来制作纳米线悬挂结构的方法,并可运用该技术进一步制造多层结构和特殊的纳米器件。
This paper demonstrates the use of accurate voltage contrast image technology to achieve in situ electron beam nano-etching technology, precise positioning, and the use of the technology to produce a suspension structure of the nano-switch. Through the use of accurate voltage contrast image positioning technology, can be well controlled deflection electrode positioning error can be reduced to about 10nm. Through this technique, the nanowire dispersed in the middle of two resistive layers can be formed into a suspended structure without using only one electron beam nano-etching through any etching process. In-situ e-beam etching of the entire process, without moving the sample stage to eliminate the sample stage movement error. Therefore, the entire process does not require high-precision laser stage and positioning marks, thus simplifying the traditional electron beam nano-etching process. The nano-switch fabricated by the method well achieves the closed and the disconnected state with the change of the applied voltage. This simplified process provides a simple, cost-effective, and rapid method for fabricating nanowire suspension structures using a modified field emission scanning electron microscope (FESEM) that can be used to further fabricate multilayer structures and special Nanodevices.