论文部分内容阅读
本文报导(100)InP衬底上液相外延生长的高纯GaInAs及其性质。可重复地获得低载流子浓度(3.8～5.4×10~(14)cm~(-3))和高电子迁移率(在77K,为47000～51000cm~2V·s)。研究了源Ga-In-As熔体烘烤温度对外延层纯度的影响。光致发光研究和van der Pauw测量的结果表明,通过适当的热处理可去除源溶液中的受主杂质和施主杂质。
This paper reports the (100) high purity GaInAs grown by liquid phase epitaxy on InP substrate and its properties. The low carrier concentration (3.8 ~ 5.4 × 10 ~ (14) cm ~ (-3)) and high electron mobility (47000 ~ 51000cm ~ 2V · s at 77K) can be obtained repeatedly. The effect of the source Ga-In-As melt temperature on the purity of the epitaxial layer was investigated. The photoluminescence studies and the van der Pauw measurements show that the acceptor and donor impurities in the source solution can be removed by a suitable heat treatment.