【摘 要】
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We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al2O3 lamination diele
【机 构】
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Key Lab of Fundamental Science for National on Wide Band-Gap Semiconductor Technology, School of Mic
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We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al2O3 lamination dielectric deposited by atomic layer deposition (ALD) as the gate insulator.A large gate voltage swing (GVS) of 3.96 V and a high breakdown voltage of-150 V for the MIS-HEMT were obtained.We present the gate leakage current mechanisms and analyze the reason for the reduction of the leakage current.Compared with traditional HEMTs,the maximum drain current is improved to 960mA/mm,indicating that NbAlO layers could reduce the surface-related depletion of the channel layer and increase the sheet carrier concentration.In addition,the maximum oscillation frequency of 38.8 GHz shows that the NbAlO high-k dielectric can be considered as a potential gate oxide comparable with other dielectric insulators.
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