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在Ⅲ族氮化物的MOCVD生长中,存在着生长窗口窄、生长速率低、产生纳米颗粒、反应前体消耗大等问题,它们几乎都和生长中的化学反应有关。随着MOCVD反应器尺寸的增大,由于反应气体驻留时间延长,寄生反应问题更加严重,薄膜质量将更加难以控制。因此,深入了解Ⅲ族氮化物MOCVD生长的化学反应机理,成为控制、优化和预测氮化物薄膜生长的关键。本文总结了前人对GaN生长的气相反应路径的研究,特别是两条相互竞争的气相反应路径,即热解路径和加合路径,也介绍了作者团队近年来的相关研究进展。
In the MOCVD growth of group III nitride, there are problems such as narrow growth window, low growth rate, generation of nanoparticles and high consumption of reaction precursors. Almost all of them are related to the chemical reaction in growth. As the size of the MOCVD reactor increases, the problem of parasitic reactions becomes more serious as the residence time of the reaction gas is extended and the quality of the film will be more difficult to control. Therefore, in-depth understanding of the chemical reaction mechanism of group III nitride MOCVD growth has become the key to control, optimize and predict the growth of nitride thin films. This review summarizes previous studies on the gas-phase reaction pathways of GaN growth, in particular, two competing gas-phase reaction paths, ie, pyrolysis paths and adducting paths, as well as the progress made by the author team in recent years.