论文部分内容阅读
以氯化亚锡、硫代乙酰胺、三氯化锑为反应物,采用化学浴沉积法在玻璃衬底上沉积不同锑掺杂量(摩尔分数)硫化锡(Sn S:Sb)膜,研究了锑掺杂量对薄膜晶相结构、表面形貌和光电性能的影响。结果表明:锑掺杂Sn S薄膜是具有正交结构多晶薄膜,薄膜为纳米片组装成的花状球形颗粒。随着Sb掺杂量由1.8%增加到7.2%,其相应的禁带宽度从0.93 e V增加到1.30 e V。随着Sb掺杂量的增加,Sn S薄膜的电阻率呈现先下降后增大趋势,当Sb掺杂量为3.6%时,其最小值为5.21×103?·cm。
Stannous chloride, thioacetamide and antimony trichloride were used as reactants to deposit SnS: Sb films with different amounts of antimony doped on the glass substrate by chemical bath deposition The effects of antimony doping on the crystal structure, surface morphology and photoelectric properties of thin films were investigated. The results show that the antimony-doped Sn S film is a polycrystalline film with orthogonal structure and the film is a flower-like spherical particle assembled with nanosheets. As the Sb doping amount increases from 1.8% to 7.2%, the corresponding band gap increases from 0.93 eV to 1.30 eV. With the increase of Sb doping amount, the resistivity of SnS films first decreases and then increases. When the doping amount of Sb is 3.6%, the minimum value is 5.21 × 103? Cm.