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研究了基于4H-SiC衬底的(SiFe)C的稀磁半导体材料制备方法,不同于其他人采用的MBE或MOCVD生长的方法,用离子注入的方法进行材料制备,能够与现有的集成电路工艺相兼容,用这种方法所对应的样品的居里温度320K,高于室温,具有潜在应用的价值.在制备过程中,采用了HNH退火工艺,即退火分为三个阶段,每个阶段对应不同的退火气氛、时间和温度, XRD分析表明,每个阶段都对应不同的结晶结果.另外,对应不同的Fe离子浓度,进行了实验对比,结果表明,当x=0.051的情况下对应最高的居里温度.
The preparation method of dilute magnetic semiconductor material based on 4H-SiC substrate (SiFe) C is studied. Compared with the method of MBE or MOCVD used by others, the method of ion implantation is used for material preparation and can be combined with existing integrated circuits Compatible with the process, using this method corresponds to the sample Curie temperature 320K, higher than room temperature, has potential applications in the preparation process, the use of HNH annealing process, the annealing is divided into three stages, each stage Corresponding to different annealing atmospheres, time and temperature, XRD analysis shows that each stage corresponds to different crystallization results. In addition, corresponding to different Fe ion concentration, the experimental comparison shows that when x = 0.051, the highest corresponding case Curie temperature.