衬底负偏压及溅射功率对SiO2/Cu薄膜形貌的影响

• 作 者: 田小丽 张敏刚 陈峰华
• 机 构: 太原科技大学,
• 出 处: 微纳电子技术
• 发表日期: 2013年02期
• 关键词: 射频磁控溅射 衬底负偏压 溅射功率 薄膜 形貌

采用射频磁控溅射镀膜技术,分别以不同的衬底负偏压和射频溅射功率下在p型Si(100)基片上制备了SiO2/Cu薄膜。用原子力显微镜(AFM)对薄膜的表面形貌进行扫描分析,实验结果表明,衬底负偏压和射频溅射功率对SiO2/Cu薄膜的表面形貌都有显著的影响。衬底负偏压在0～15 V内,薄膜表面颗粒尺寸和均方根粗糙度都随着衬底负偏压的增大呈减小的趋势,而溅射功率在100～200 W内,薄膜表面颗粒尺寸和均方根粗糙度都随溅射功率的升高呈增大的趋势。成膜初期是层状生长模式,后期为岛状生长模式,整个成膜过程是典型的层岛生长模式。

The films of SiO2 / Cu were prepared on p-type Si (100) substrates by RF magnetron sputtering at different substrate bias and RF sputtering powers, respectively. The scanning electron microscopy (AFM) was used to analyze the surface morphology of the films. The experimental results show that the substrate bias voltage and RF sputtering power have a significant influence on the surface morphology of SiO2 / Cu films. Negative substrate bias bias in the 0 ~ 15 V, the film surface particle size and root mean square roughness with the increase of the substrate negative bias voltage tends to decrease, while the sputtering power within 100 ~ 200 W, The particle size and root mean square roughness of the films all showed an increasing tendency with the increase of sputtering power. The initial stage of film formation is the laminar growth pattern, and the late is the island-like growth pattern. The whole film formation process is a typical layer-island growth pattern.