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基于最低未被占据分子轨道(LUMO)和最高被占据分子轨道(HOMO)的高斯态密度分布与载流子在允许量子态中的费米-狄拉克(Fermi-Dirac)分布,提出有机半导体中物理掺杂的理论模型;研究了掺杂浓度、温度和禁带宽度对载流子浓度的影响,并与一些报道的实验结果做了比较.研究发现无论是否掺杂,温度升高时,有机半导体中的载流子浓度都会增大,并且随温度倒数的线性减小而指数增大;对于本征有机半导体,载流子浓度随禁带宽度的增大而指数下降,随高斯分布宽度的平方指数增加;对杂质和主体不同能级关系的掺杂情形下掺杂浓度对载流子浓度的影响做了数值研究.
Based on the Gaussian density distribution of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO) and the Fermi-Dirac distribution of charge carriers in the allowed quantum states, it is proposed that in organic semiconductors The theoretical model of physical doping was studied.The effects of doping concentration, temperature and bandgap on the carrier concentration were studied and compared with some reported experimental results.It was found that, with or without doping, The carrier concentration in semiconductors increases, and increases exponentially with the linear decrease of reciprocal temperature. For intrinsic organic semiconductors, the carrier concentration decreases exponentially with the increase of the forbidden band width. With the width of Gaussian distribution The square exponent increases; the effect of doping concentration on the carrier concentration is studied numerically in the case of doping with different energy levels of impurity and host.