,Optimum Indium Concentration for Growth of 1.3μm InAs/InxGa1-xAs Quantum Dots in a Well

• 作 者: WANG Chong LIU Zhao-Lin CHEN Xue-Mei XIA Chang-Sheng ZHANG Shu YANG Yu LU Wei
• 机 构: Research Institute of Engineering and Technology, Yunnan University, Kunming 650091“,”National Labor
• 出 处: 中国物理快报（英文版）
• 发表日期: 2007年11期

Five InAs/InxGai-xAs quantum dots in a well (DWELL) with different indium concentration x are grown by solid source molecular beam epitaxy. The high quantum dot density is observed in the InAs/In0.3Ga0.7As DWELL. The photoluminescence (PL) experiments indicate that the ground state peaks of InAs/Ino. 15 Gao.85As and InAs/In0.22 Ga0.78 As DWELLs shift to 1.31 and 1.33 μm, respectively. The optical properties are investigated by using the PL and piezoreBectance spectroscope methods. An abnormal blue shift has been observed with the further increase of x from 0.22 to 0.30.