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对Ｓｉ＋注入ＧａＡｓ的前后及其退火的前后用和不用ＳｉＯ２包封进行了对比 实验。包封退火大大提高了注入离子的激活率；在包封退火的情况下，光片注入 的要比贯穿注入的载流子分布窄。所以，光片注入后包封退火较实用，它使载流 子分布窄，激活率高。
Comparative experiments were performed before and after Si + implanted GaAs and before and after annealing with and without SiO2 encapsulation. Encapsulation annealing greatly increases the activation rate of implanted ions; in the case of annealed encapsulation, the light sheet is injected with a narrower distribution of carriers than the implanted carrier. Therefore, after the injection of annealed sheet annealing is more practical, it makes the carrier distribution is narrow, high activation rate.