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用金刚石对顶砧压力装置在液氮温度下和０～４ＧＰａ的压力范围内测量了不同阱宽（１．７～１１．０ｎｍ）的ＩｎｘＧａ（１－ｘ）Ａｓ／Ａｌ（１－ｙ）Ｇａ（１－ｙ）Ａｓ（ｘ，ｙ＝０．１５，０；０．１５，０．３３；０，０．３３）多量子阱的静压光致发光谱，发现在Ｉｎ０．１５Ｇａ０．８５Ａｓ／ＧａＡｓ多量子阱中导带第一子带到重空穴第一子带间激子跃迁产生的光致发光峰能量的压力系数随阱宽的增加而减小，在Ｉｎ０．１５Ｇａ０．８５Ａｓ／Ａｌ０．３３Ｇａ０．６７Ａｓ和ＧａＡｓ／Ａｌ０．３３Ｇａ０．６７Ａｓ多量子阱中相应发光峰的压力系数随附宽的增加而增加．根据Ｋｒｏｎｉｙ－Ｐｅｎｎｅｙ模型计算了发光峰能量的压力系数随阱宽的变化关系，结果表明导带不连续性随压力的增加（减小）及电子有效质量随压力的增加是压力系数随阱宽增加而减小（增加）的主要原因．
InxGa (1-x) As / Al (1-y) Ga with different well widths (1.7 to 11.0 nm) was measured with a diamond-to-anvil pressure device at liquid nitrogen temperatures and pressures ranging from 0 to 4 GPa (1-y) As (x, y = 0.15,0; 0.15,0.33; 0,0.33) Quantum Well Static Pressure Photoluminescence Spectroscopy and found that In0.15Ga0.85As / The pressure coefficient of photoluminescence peak energy produced by the exciton transition from the first subband to the first hole of the heavy hole in the GaAs multiple quantum well decreases with the increase of the well width. In the In0.15Ga0.85As / Al0 The pressure coefficients of the corresponding luminescence peaks in Ga0.67As and GaAs / Al0.33Ga0.67As multiple quantum wells increase with the increasing of the width. The Kroniy-Penney model was used to calculate the variation of the pressure coefficient of the emission peak with the well width. The results show that the discontinuity of the conduction band increases with pressure (decrease) and the electron effective mass increases with the pressure. The pressure coefficient increases with the well width And reduce (increase) the main reason.