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本文以卢瑟福离子背散射技术（ＲＢＳ）检测了半绝缘ＧａＡｓ（１００）化学机械抛光表面的微损伤状况，并以α台阶仪测量了抛光表面的粗糙度。研究了以胶体ＳｉＯ２和ＮａＯＣｌ溶液的混合液对ＧａＡｓ进行化学机械抛光方法中主要工艺条件对表面质量的影响。把ＲＢＳ法同Ｘ射线双晶衍射法对表面损伤的测量结果进行了比较，二者对应得很好。通过逐层腐蚀与ＲＢＳ相结合测定了抛光过程造成的损伤层的厚度，发现如果抛光条件不适宜，获得的晶片表面尽管目视光洁度很好，也还有一定厚度的损伤层。ＲＢＳ法测得好的非掺半绝缘ＧａＡｓ（１００）（由ＬＥＣ法生长）抛光表面散射粒子最低产额低达３１％，这样的晶片用腐蚀法未发现有损伤层。
In this paper, the Rousselback ion backscattering technique (RBS) was used to detect the micro-damage of semi-insulating GaAs (100) chemical mechanical polishing surface, and the roughness of the polished surface was measured by α-step spectrometer. The effects of main process conditions on the surface quality of GaAs by chemical mechanical polishing with a mixture of colloidal SiO2 and NaOCl solution were studied. The RBS method with the X-ray double crystal diffraction method for the comparison of surface damage measurements, the two correspond well. The thickness of the damaged layer caused by the polishing process was determined by layer-by-layer etching in combination with RBS. It was found that if the polishing condition is not suitable, the surface of the obtained wafer, despite the good visual finish, has a certain thickness of damaged layer. RBS method to determine a good non-doped semi-insulating GaAs (100) (grown by the LEC method) the minimum surface scattering particle scattering yield of as low as 3 1%, such a wafer etching method found no damaged layer.