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金属氧化物半导体场效应晶体管在功率损耗中,较那些等效二极晶体管在频率20至60千赫时损耗小,并在低电压的阻力上场效应晶体管对反向的情况大致相等,此外,*参阅理查德·布莱拜奇(Ruchard Blanchard)和彼得·伯杰(Petor Berger)资料,场效应晶体管在开关式电源状态中,显示更容易经得起高电压尖脉冲(峰值电压普遍地超过最大调整输入电压1(1/2)到3倍)。结果在低电压中功率场效应晶体管能够使用于如开关元件,在通常较高频率时,开关型功率场效应晶体管较那些二极管的经济,如果频率增加,电容器和变压器尺
MOSFETs consume less power loss than those equivalent diodes in the frequency range of 20 to 60 kHz and have approximately the same effect on the reverse direction for low-voltage resistances. In addition, * See Ruchard Blanchard and Petor Berger for example. Field-Effect Transistors In switch-mode power states, the display is more likely to withstand high voltage spikes (the peak voltage generally exceeds Adjust the input voltage 1 (1/2) to 3 times maximum). As a result, low-voltage power FETs can be used in switching elements such as switching elements. Switching power transistors are economically more efficient than those diodes at higher frequencies. If the frequency increases, the capacitor and transformer scale