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本文根据电流连续方程和电荷控制理论,推导了一个预示硅n~+-pn~-n~+高压功率开关晶体管的电流放大系数h_(FE)与收集极工作电流I_c之间的关系的归一化表达式,用以指导功率开关晶体管的设计,以达到快速、准确地确定收集极最大工作电流I_(cm)之目的.把所得的关系式用于预示BV_(ceō)≥100伏的高压功率开关晶体管的h_(FB)-I_c关系,取得了理论与实践相一致的结果.文章的最后部份讨论了影响预示正确性的一些实际因素.
In this paper, according to the current continuous equation and the charge control theory, a regression of the current amplification factor h FE and the collector working current I c is derived for a silicon n + -pn ~ -n ~ + high voltage power switch transistor. The expression is used to guide the design of the power switch transistor so as to achieve the purpose of determining the maximum collector current I cm in a fast and accurate manner.The resulting relation is used to indicate the high voltage power of BV ceo ≥100 volt The relationship between the h_ (FB) -I_c of the switching transistor and the result of the theory and practice are consistent.The final part of the article discusses some practical factors that affect the correctness of the prediction.