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在紫外和可见光电子器件、高温电子学器件、冷阴极和太阳防护探测器的应用中 ,Ⅲ族氮化物是一类重要的材料。近年来 ,氮化物基的LED的制备成功 ,具有提供白光照明代替白炽灯和荧光灯的潜在能力。人们对用MOCVD方法生长GaN基材料的兴趣日益高涨 ,特别是对多片、均匀生长的大尺寸反应器的要求日益迫切。本文概述了紧配合喷淋头反应器的设计思想和其特性。结合Ⅲ族氮化物生长对设备的相关要求 ,给出了这种设备运行的一些结果。这些结果表明 ,这种紧配合喷淋头反应器很适合在研究和产品生产中的GaN基材料结构的生长。
Group III nitrides are an important class of materials for applications in UV and visible electronics, high temperature electronics, cold cathode and sun protection detectors. In recent years, nitride-based LEDs have been successfully fabricated with the potential to provide white light instead of incandescent and fluorescent lamps. There is growing interest in the growth of GaN-based materials by MOCVD, especially for large-sized multi-piece, uniform-growth reactors. This article provides an overview of the design idea and characteristics of a tight fit showerhead reactor. Combined with the related requirements of equipment for the growth of group III nitride, some results of the operation of this equipment are given. These results show that this tight fit showerhead reactor is well suited for the growth of GaN-based material structures for research and product manufacturing.