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美国Cree公司与美海军研究院合作,研制出一种用MBE生长的AlGaN/GaN HEMT 结构,其室温霍尔迁移率达到了最高水平,为1920 cm2/Vs。上述器件研究小组认为GaN基HEMT的性能碍于穿线位错,因为它限制了迁移率。研究人员把他们所取得的进展归功于采用了独立的GaN衬底。这种独立的GaN衬底的穿线位
In collaboration with the United States Naval Research Institute, Cree Corporation of the United States has developed an AlGaN / GaN HEMT structure grown with MBE that achieves a maximum Hall mobility of 1920 cm2 / Vs at room temperature. The device research team believes that GaN-based HEMT performance due to threading dislocation, because it limits the mobility. Researchers attributed the progress they made to using a separate GaN substrate. This independent GaN substrate threading bit