【摘 要】
：
A low-barrier Schottky barrier diode based on the InGaAs/InP material system is designed and fabricated with a new non-destructive dry over-etching process. By
【机 构】
：
Institute of Microelectronics, Chinese Academy of Sciences,School of Electronic Engineering, Univers
【出 处】
：
Chinese Physics Letters
论文部分内容阅读
A low-barrier Schottky barrier diode based on the InGaAs/InP material system is designed and fabricated with a new non-destructive dry over-etching process. By using this diode, a high-sensitivity waveguide detector is proposed. The measured maximum responsivity is over 2000 mV/mW at 630 GHz. The measured noise effective power(NEP) is less than 35 pW/Hz~(0.5) at 570-630 GHz. The minimum NEP is 14 pW/Hz~(0.5) at 630 GHz. The proposed high-sensitivity waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.
A low-barrier Schottky barrier diode based on the InGaAs / InP material system is designed and fabricated with a new non-destructive dry over-etching process. By using this diode, a high-sensitivity waveguide detector is proposed. The measured maximum responsivity is over 2000 mV / mW at 630 GHz. The measured noise effective power (NEP) is less than 35 pW / Hz ~ (0.5) at 570-630 GHz. The minimum NEP is 14 pW / Hz ~ (0.5) at 630 GHz. The proposed high-sensitivity waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.
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